1 p-channel 30 v (d-s) mosfet feature s ? exte nded v gs ra nge ( 25 v) for adaptor switch applications ? extremely low r ds( on) ? trenchfet ? power mosfet ?100 % r g and uis tested ? typical esd performance: 4000 v (hbm) applications ? adap tor switch, load switch ? power management ? noteb ook comp uters and portable battery packs notes: a. b a sed o n t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady stat e conditions is 90 c/w. p roduct summary v ds (v) r ds(on) ( : ) max. i d a q g ( typ .) - 30 0.0078 at v gs = - 10 v - 26 66 nc 0.0082 a t v gs = - 6 v - 23 0.0 092 at v gs = - 4.5 v - 20 absolute maximum ratings (t a = 25 c, unless otherwise noted) p arameter s y mbol limit unit d rain-source voltage v ds - 30 v gate-source v oltage v gs 2 5 contin uous drain current (t j = 150 c ) t c = 25 c i d - 26 a t c = 70 c - 20.7 t a = 25 c - 17.3 t a = 70 c - 1 3.9 b, c pulsed dr ain current (t = 300 s) i dm - 60 c ontinuou s source-dr ain diode current t c = 25 c i s - 5 .8 b, c t a = 25 c - 2 .6 b, c single pulse a valanche current l = 0. 1 mh i as - 40 single pulse a valanche energy e as 80 mj maxim u m power dissipation t c = 25 c p d 6.9 w t c = 70 c 4.4 t a = 25 c 3.1 b, c t a = 70 c 2 b, c oper ating j unction and storage temperature range t j , t st g - 55 to 150 c t herm al resistance ratings p aram eter sym b o l t ypical maximum un it m aximum junction-to-ambient b, d t d 10 s r thja 33 40 c / w maximum junction-to-foot (drain) steady state r thj f 15 17 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm p owerp ak so-8 bottom vie w s g d p-channel mosfe t z z z g l q w h n m s ' 7 3
2 no te s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications (t j = 25 c, unless otherwise noted) p aram e ter s ymbol t est c onditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds t emper ature coefficient ' v ds /t j i d = - 250 a - 24 mv/c v gs( th) t emperature coefficient ' v gs( th) /t j 6 gate-s ource thresho ld voltage v gs( th) v ds = v gs , i d = - 250 a - 1.2 - 2.8 v gate-source leakage i gss v ds = 0 v , v gs = 25 v 150 a v ds = 0 v , v gs = 20 v 15 z ero gate v oltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 v ds = - 30 v , v gs = 0 v , t j = 55 c - 10 on-state dr ain current a i d(on) v ds d - 5 v , v gs = - 10 v - 20 a drain-source on-state resista nce a r ds( on ) v gs - 10 v , i d = - 13 a 0.0054 0.0078 : v gs - 6 v , i d = - 10 a 0.0068 0.0082 v gs - 4.5 v , i d = - 8 a 0.0083 0.0092 f orward transconductance a g fs v ds = - 1 5 v , i d = - 13 a 44 s dy nami c b inpu t capacitan ce c iss v ds = - 15 v , v gs = 0 v , f = 1 mhz 4620 pf output c apacitance c os s 880 re verse t ransfer capacitance c rs s 820 t otal gate charge q g v ds = - 15 v , v gs = - 10 v , i d = - 17.3 a 102 153 nc v ds = - 15 v, v gs = - 5 v , i d = - 17.3 a 66 80 gate-source charge q gs 16 gate- dra in charge q gd 28 g ate re sistance r g f = 1 mhz 0.3 1.3 2.6 : tu r n - o n d e l ay t i m e t d( on) v dd = 0 v , r l = 1.5 : i d # - 10 a, v gen = - 4.5 v, r g = 1 : 70 105 ns rise time t r 70 105 tur n-off delay time t d( off) 45 68 fal l time t f 27 41 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v, r l = 1 .5 : i d # - 10 a, v gen = - 10 v , r g = 1 : 18 30 rise time t r 15 25 turn-off delay time t d( off) 52 80 fal l time t f 14 25 drain -so urce body diode characteristics continuous source-drain diode current i s t c = 25 c - 5.8 a pulse diode f orw ard current i sm - 60 body diode v oltage v sd i s = - 10 a, v gs = 0 v - 0.78 - 1.2 v body diode re v erse recovery time t rr i f = - 10 a, di/ dt = 1 00 a/s, t j = 25 c 35 53 ns body diode re v erse recovery charge q rr 25 38 nc re v erse recovery fall time t a 19 ns re verse reco very rise time t b 16 z z z g l q w h n m s ' 7 3
3 typica l c har ac teri stics (25 c, unless otherwise noted) gate current vs. gate-sou rce vo ltage output characteristics on-resistance vs. drain current 0.000 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 i gss - gate current (ma ) v gs - gate-s o urce voltage (v) t j = 25 c 0 15 30 45 60 0 0.5 1 1.5 2 i d - drain c urrent (a) v ds - drai n- to-source voltage (v) v gs = 4 v v gs = 10 v thru 5 v v gs = 3 v 0.002 0.005 0.008 0.011 0.014 01 53 04 5 6 0 r ds(on) - on-resistance () i d - drain current (a ) v gs = 6 v v gs = 4.5 v v gs = 10 v gate current vs. gate-so u rce voltage transfer characteristics capacitance 10 -02 10 -03 10 -04 10 -05 10 -06 10 -07 10 -08 10 -09 0 6 12 18 24 30 36 i gss - g ate current (a ) v gs - gate-to- s ource voltage (v) t j = 150 c t j = 25 c 0 2 4 6 8 10 01234 i d - drain current (a ) v gs - gate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1200 2400 3600 4800 6000 7200 0 6 12 18 24 30 c - capacitance (pf) v ds - drain-to- s ource voltage (v) c iss c oss c rss www.din-tek.jp dt p 953 1
4 ty pi cal ch ara cteristics (25 c, unless otherwise noted) gate charge sou r ce-drain diode forward voltage threshold voltage 0 2 4 6 8 10 03 06 0 9 0 1 2 0 v gs - gate-to- source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 7.5 v v ds = 15 v i d = 17.3 a 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a ) v sd - source-to- drain voltage (v) t j = 150 c t j = 25 c 1.1 1.45 1.8 2.15 2.5 - 50 - 25 0 25 50 75 100 125 150 v gs(t h) (v) t j -t e m p erature ( c) i d = 250 a on-resistan ce vs. ju nction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.60 0.85 1.10 1.35 1.60 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (norm alized) t j - j unction temperature ( c) i d = 13a v gs = 10 v v gs = 4.5 v 0.000 0.005 0.010 0.015 0.020 2468 1 0 r ds(on) - on-resistance () v gs - gate- to- source voltage (v) t j = 125 c t j = 25 c i d = 13 a 0 30 50 10 20 po w er ( w ) time (s) 1 600 10 40 0.1 0.01 100 www.din-tek.jp dt p 953 1
5 typica l c har ac teristics (25 c, unless otherwise noted) * th e power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re usef ul in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient power junction-to-foot 0.001 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a ) v ds - drain- t o-source voltage (v) * v gs > mini mum v gs at which r ds(on) is specified 100 ms limited by r ds(on) * 1 ms t a = 25 c sin g le pulse bvdss li m ited 10 ms 100 s 1 s dc, 10 s 0 2.2 4.4 6.6 8.8 0 25 50 75 100 125 150 power (w) t c - case temperatur e ( c) curren t d erating* power junction-to-ambient 0 6 12 18 24 30 0 25 50 75 100 125 150 i d - drain current (a ) t c - case temperatur e ( c) 0.0 0.5 0.9 1.4 1.8 0 25 50 75 100 125 150 power (w) t a - ambient temperatu r e ( c) www.din-tek.jp dt p 953 1
1 powerpak so -8, (single/dual) millimeters inch es d im. min. nom. max. min. nom. max. a . . . . . . a . . . . . . . . . . c . . . . . . d . . . . . . d . . . . . . d . . . . . . d . . . . . . d . tp. . tp. d . tp. . tp. e . . . . . . e . . . . . . e . . . . . . e . . . . . . e . tp. . tp. e . sc . sc . tp. . tp. . . h . . . . . . l . . . . . . l . . . . . . t . . . . . . m . tp. . tp. ecn tre. e d . dimenion ecie of mo fa an ctting rr . . note inc i goer n. dimenion e cie of mo gate rr. ac kie ie of singe p a ackie ie of da pa detai d d d c a e d e d e h l d d a d e l d e d e e l h e d d m e . . dndhirpdlr lhnms
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
|
